Document Type : Research Article
Authors
Department of Electronics and communication Engineering, Dr. B. R. Ambedkar National Institute of Technology Jalandhar, Punjab, India
Abstract
In this work, the charge plasma based dual electrode doping-less tunnel FETs (DEDLTFET) is simulated with the use of different materials such as silicon (Si-DEDLTFET), Silicon-germanium (SiGe-DEDLTFET) and SiGe at Source (SiGe Source DEDLTFET). The charge plasma technique is used to create source and drain region on an intrinsic body by selecting appropriate work function of metal electrode. The paper provides the comparison among devices on the basis of RF parameters. The on-state current (ION) for SiGe source DEDLTFET, SiGe-DEDLTFET and DEDLTFET are 1.84x10-4, 8.75x10-5 and 8.11x10-6 A/µm respectively for similar off-state current (IOFF). This result show that SiGe source DEDLTFET device provides better drive current along with improved ON-OFF current ratio (ION/IOFF) and subthreshold slope (SS). Improved transconductance (gm) and cut-off frequency (fT) show that the hetero-material device has better RF performance while comparing with the other two devices. Copyright © 2017 VBRI Press.
Keywords
Ferain I., Razavi P., O’Neill B., Blake A., White M., Kelleher
A.M., McCarthy B.; Murphy R., Nat.Nanotechnol. 2010, 5, 225.
DOI:10.1038/nnano.2010.15
2.Choi W.Y., Park B.G.,Lee J.D.; IEEE Electron Device Letters.
2007, 28, 743.
DOI:10.1109/LED.2007.901273
DOI:10.1016/j.sse.2007.09.014
4.Anand Sunny, Amin S. Intekhab, Sarin R.K.; Journal of
Computational Electronics. 2016, 15,94.
DOI: 10.1007/s10825-015-0771-4
5.Kumar M. Jagadesh, Janardhanan Sindhu; IEEE Transactions on
Electron Devices, 2013, 60, 3285.
DOI:10.1109/TED.2013.2276888
6.Rajasekharan, B., Hueting, R.J.E., Salm, C., van Hemert, T.,
Wolters, R.A.M., Schmitz, J.; IEEE Electron Device Letters.
2010, 31, 528.
DOI:10.1109/LED.2010.2045731
7.Anand Sunny,Sarin R.K.; Journal of Nanoelectronics and
Optoelectronics. 2016, 11, 543.
DOI:10.1166/jno.2016.1922
8.Lahgere A., Sahu C., Singh J.; IEEE Transactions on Electron
Devices.2015, 62, 2404.
DOI:10.1109/TED.2015.2446615
9.Patel Nayan, Ramesha A., Mahapatra; Microelectronics Journal.
2008, 39, 1671.
DOI:10.1016/j.mejo.2008.02.020
10.Asthana P. K., Goswami Y., Basak S., Rahi S.B., Ghosh B.; RSC
Advances. 2015, 5, 48779.
DOI: 10.1039/C5RA03301B
11.Anghel Costin, Gupta A., Amara A, Vladimirescu A.; IEEE
Transactions on Electron Devices. 2011, 58, 1649.
DOI:10.1109/TED.2011.2128320
12.Faisal Bashir,Sajad A. Loan, M. Rafat, Abdul Rehman M.
Alamoud, Shuja A. Abbasi.; J Comput Electron. 2015, 14, 477.
DOI:10.1007/s10825-015-0665-5
13.ATLAS Device Simulation Software, Silvaco Int., Santa Clara,
CA, USA, 2012.
)