Matthias Arzig; TaChing Hsiao; Peter J. Wellmann
Abstract
In this work we studied the influence of three different SiC powder size distributions and the sublimation behavior during physical vapor transport growth of SiC in a 3 inch crystal processing configuration. The evolution of the source material as well as of the crystal growth interface was carried out ...
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In this work we studied the influence of three different SiC powder size distributions and the sublimation behavior during physical vapor transport growth of SiC in a 3 inch crystal processing configuration. The evolution of the source material as well as of the crystal growth interface was carried out using in‐site X‐ray computed tomography. Two SiC powders exhibited a single modal D90 size distribution of ca. 50 μm and ca. 200 μm, respectively. In both cases the average SiC powder density was 1.2 g/cm3. The third powder was a mixture of the above mentioned source materials and exhibited a bimodal particle size distribution. The corresponding average SiC powder density was 1.7 g/cm3. In this latter case the in‐itu X‐ray computed tomography study revealed an improved growth interface stability that enabled a much longer crystal growth process. During process time, the sublimation‐recrystallization behavior of the mixed SiC powder showed a much smoother morphology change and slower materials consumption as well as much more stable shape of the growth interface than in the case of the less dense SiC source. By adapting the size distribution of the SiC source material we achieved to significantly enhance stable growth conditions. Copyright © 2018 VBRI Press.
Ranu Pal; Sandeep Kumar Singh; M.J. Akhtar; Kamal K. Kar
Abstract
Efforts to use microwaves in material processing are gradually increasing. However, the phenomenon associated with the processing is less understood. The conversion of electromagnetic energy into heat depends largely on the dielectric properties of the material being treated. Therefore, the fundamental ...
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Efforts to use microwaves in material processing are gradually increasing. However, the phenomenon associated with the processing is less understood. The conversion of electromagnetic energy into heat depends largely on the dielectric properties of the material being treated. Therefore, the fundamental knowledge of these properties is essential for processing of materials using microwaves. In this study, first the dielectric evolution of silicon carbide (SiC) infused epoxy nanocomposites prepared at room temperature with 0-0.3 wt% content of SiC was measured. Secondly, the dielectric properties of the prepared nanocomposites after heating for 10 min in microwaves at a power of 500 W were investigated in order to see the effect of microwave curing. The dielectric properties of all the samples were measured at the microwave frequency of 2.45 GHz using the advanced cavity perturbation method attached to a vector Network Analyzer (VNA). The results indicate that the dielectric properties of the resultant nanocomposites increase with the increase in SiC content as compared to the neat epoxy sample. However, the dielectric properties were found to be decrease after microwave curing signaling the maximum possible extent of curing. This indicates that reinforcement of SiC nanoparticles in epoxy makes them ideal candidates for efficient microwave curing of nanocomposites. Lastly, the determination of thermal properties also confirms the maximum possible extent of curing of epoxy using SiC as nanofillers. Copyright © 2018 VBRI Press.