1 Crystal Growth Lab, Materials Department 6 (i‐meet), University of Erlangen-Nürnberg (FAU), Martensstr. 7, 91058 Erlangen, Germany.

2 Industrial Technology Research Institute of Taiwan (ITRI), 195, Sec 4, Chung Hsing Rd., Chutung, Hsinchu 31040, Taiwan


In this work we studied the influence of three different SiC powder size distributions and the sublimation behavior during physical vapor transport growth of SiC in a 3 inch crystal processing configuration. The evolution of the source material as well as of the crystal growth interface was carried out using in‐site X‐ray computed tomography. Two SiC powders exhibited a single modal D90 size distribution of ca. 50 μm and ca. 200 μm, respectively. In both cases the average SiC powder density was 1.2 g/cm3. The third powder was a mixture of the above mentioned source materials and exhibited a bimodal particle size distribution. The corresponding average SiC powder density was 1.7 g/cm3. In this latter case the in‐itu X‐ray computed tomography study revealed an improved growth interface stability that enabled a much longer crystal growth process. During process time, the sublimation‐recrystallization behavior of the mixed SiC powder showed a much smoother morphology change and slower materials consumption as well as much more stable shape of the growth interface than in the case of the less dense SiC source. By adapting the size distribution of the SiC source material we achieved to significantly enhance stable growth conditions. Copyright © 2018 VBRI Press.


1.Y.M. Tairov and V.F. Tsvetkov, J. Cryst. Growth, 1978, 43, 209.
2.G. Ziegler, P. Lanig, D. Theis and C. Weyerich, IEEE
Trans.Electr.Dev., 1983,4,277.

3.S.G. Muller, R.C. Glass, H.M. Hobgood, V.F. Tsvetkov, M.
Brady, D. Henshall, D. Malta, R. Singh, J. Palmour and C.H.
Carter, Mater. Sci. Eng. B: Solid-State Mater. Advanced Technol.,
2001, 80, 327.

4.D. Chaussende, P. Wellmann, M. Pons; Status of SiC bulk growth
processes; J. Phys. D: Appl. Phys. (Editor special issue: Patrick
Soukiassian) 2007, 40, 6150.

5.H. Kondo, H. Takaba, M. Yamada, Y. Urakami, T. Okamoto, M.
Kobayashi, T. Masuda, I. Gunjishima, K. Shigeto, N. Ooya, N.
Sugiyama, A. Matsuse, T. Kozawa, T. Sato, F. Hirose, S.
Yamauchi, S. Onda, Development of RAF Quality 150mm 4H-
SiC Wafer, Materials Science Forum, 2014, 17, 778.

6.P. Wellmann, G. Neubauer, L. Fahlbusch, M. Salamon,
N. Uhlmann, Growth of SiC bulk crystals for application in
power electronic devices process design, 2D and 3D X-ray
in situ visualization and advanced doping, Cryst.Res.Technol.
2015, 50, 2.
7.P.J. Wellmann, D. Hofmann, L. Kadinski, M. Selder, T.L.
Straubinger and A. Winnacker; Impact of source material on
silicon carbide vapor transport growth process; J. Cryst. Growth,
2001, 225,312.