Sunny Anand; S. Inthekhab Amin
Abstract
In this work, the charge plasma based dual electrode doping-less tunnel FETs (DEDLTFET) is simulated with the use of different materials such as silicon (Si-DEDLTFET), Silicon-germanium (SiGe-DEDLTFET) and SiGe at Source (SiGe Source DEDLTFET). The charge plasma technique is used to create source and ...
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In this work, the charge plasma based dual electrode doping-less tunnel FETs (DEDLTFET) is simulated with the use of different materials such as silicon (Si-DEDLTFET), Silicon-germanium (SiGe-DEDLTFET) and SiGe at Source (SiGe Source DEDLTFET). The charge plasma technique is used to create source and drain region on an intrinsic body by selecting appropriate work function of metal electrode. The paper provides the comparison among devices on the basis of RF parameters. The on-state current (ION) for SiGe source DEDLTFET, SiGe-DEDLTFET and DEDLTFET are 1.84x10-4, 8.75x10-5 and 8.11x10-6 A/µm respectively for similar off-state current (IOFF). This result show that SiGe source DEDLTFET device provides better drive current along with improved ON-OFF current ratio (ION/IOFF) and subthreshold slope (SS). Improved transconductance (gm) and cut-off frequency (fT) show that the hetero-material device has better RF performance while comparing with the other two devices. Copyright © 2017 VBRI Press.
