Structural and electrical studies of thermally annealed tungsten nitride thin film
Advanced Materials Proceedings,
2017, Volume 2, Issue 6, Pages 362-366
10.5185/amp.2017/603
Abstract
Present work is focused on various properties of thermally annealed tungsten nitride (WN) film. Tungsten nitride thin films on silicon (100) substrates were deposited via reactive magnetron sputtering technique. Initially Ar/N2 flow ratio was optimized by varying N2 gas flow between 5 to 25 sccm. 20:5 (Ar:N2) was found to be the best for W2N phase formation. Using optimized condition, a set of WN deposited and then annealed at different temperatures i.e. 200°C, 400°C and 600°C for two hours each. Various characterizations have been done using X-ray diffraction, four probe resistivity and nano-indentation test. XRD results suggest formation of pure W2N crystalline phase of the films with face centered cubic structure. The resistivity result shows the decrease of resistivity value with increase in annealing temperature. Nano-indentation results showed hardness and elastic modulus values at 5mn load does not vary much with annealing at different temperatures. Structural, mechanical and electrical studies showed that the samples were stable up to 600°C. Thus, tungsten nitride thin films will contribute as a material suitable for long time exposure at elevated temperature for application of cutting tools. Copyright © 2017 VBRI Press.1.Martev, I.N.; Dechev, D.A.; Ivanov, N.P.; Uzunovand, T.D.;
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