Document Type : Research Article

Authors

1 Semiconductor Thin Films and Plasma Processing Laboratory, Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai, 400076, India

2 Nanomaterials and Device Fabrication Laboratory, Center for Nanoscience and Nanotechnology, Siksha ‘O’ Anusandhan University, Bhubaneswar, Odisha, 751030, India

10.5185/amp.2017/402

Abstract

The development of micro-supercapacitor (µ-SC) based on silicon nanowires (SiNWs) has increased the demands of
cost-effective methods via low temperature processing routes for the fabrication of SiNWs which can enable the realization of µ-SC directly on a Si chip. In this work, SiNWs synthesized by hot-wire chemical vapor processing (HWCVP) at low substrate temperature of 350 oC have been explored as the electrodes for the use in µ-SC. Electrochemical behavior was tested by using cyclic voltammetry (CV) and galvanostatic charging/discharging in an ionic electrolyte. TEM characterization reveals as-grown SiNWs have inner crystalline core (c-core) sheeted with an amorphous layer of silicon (a-Si) which has poor electrical conductivity and reduces the capacitance of SiNWs. Copyright © 2017 VBRI Press.

Keywords

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