Document Type : Research Article
Authors
1 Department of Physics, Sri Venkateswara University, Tirupati 517 502, India
2 Department of Physics, Vikrama Simhapuri University PG Center, Kavli 524 201, India
3 Department of Physics, NBKR Institute of Science and Technology, Vidyanagar 524413, India
Abstract
Zinc oxide thin films were deposited by RF magnetron sputtering on p-type (100) silicon and glass substrates held at room temperature by varying the oxygen partial pressures and the optimized films was annealing at different temperatures. The deposition rate of the films was decreased from 5.8 to 2.5 nm /min with increase of oxygen partial pressures. X- ray diffraction results reveal that the films deposited at oxygen partial pressure of 2x10-2 Pa the (100) preferred orientation peak crystallinity became better. Raman spectroscopy analysis shows an improvement in the crystalline quality of the films at 2x10-2 Pa. Fourier transform infrared spectroscopy of ZnO films confirms the presence Zn-O bonding. The nanorods were observed at oxygen partial pressure of 5x10-2 Pa. The maximum transmittance of 97% and crystallite size of 21 nm was observed at oxygen partial pressure of 2x10-2 Pa. The as deposited films annealed at 473 K the intensity of (100) phase was decreased. The RMS roughness of the as deposited ZnO films was 7.3 nm, and it increased to 30 nm for the films annealed at 473K. Optical spectra revealed the films annealed at 673 K show the optical band gap of 3.17 eV. Copyright © 2018 VBRI Press.
Keywords
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