Document Type : Research Article


1 Department of Electronics Engineering, Z H College of Engineering & Technology AMU, Aligarh 202002, UP, India

2 2Department of Electronics Engineering, Banasthali University, Tonk, Rajasthan 304022, India


In this work, we have performed the influence of back barrier layer thickness variation on AlGaN/GaN Metal Oxide Semiconductor High Electron Mobility Transistor (MOS-HEMT) device with 0.5 µm Schottky gate length.  The AlGaN back barrier layer presented increases the conduction band with respect to GaN channel layer so that more no of electron confinement into the GaN channel layer and improve the high-frequency performance. The effect of the back-barrier layer thickness is performed by using 2-D TCAD Atlas Silvaco numerical simulation tool by taking Hydrodynamic mobility model. Due to a large amount of two-dimensional electron gas (2-DEG) density at the AlGaN/GaN heterointerface of the MOS-HEMT device higher drain current density is obtained. The 2-D simulation is carried out with a variation of back barrier layer thickness for various device parameter such as transfer characteristics (Id-Vg), drain current with a drain voltage (Id-Vd), transconductance (gm), drain induced barrier lowering (DIBL), conduction band energy and electron concentration into the channel. In this simulation, we have also performed the RF performance like a gate to source capacitance (Cgs) and current gain cut-off frequency of AlGaN/GaN MOS-HEMT device. The results obtained by variation of AlGaN back barrier layer thickness can be a better solution in future analog and RF device application. Copyright © 2018 VBRI Press.                                                                                                                              


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