Anil S. Meshram; Ompraksh P. Chimankar; Yashwantrao D. Tembhurkar
Abstract
Thin films of CuInTe2(1-x)S2x were grown by spray pyrolysis and develop thin films on glass substrate at 350C by varying proportion x in the range of 0.25. Aqueous solutions of cupric chloride, indium tri-chloride, thio-urea and tellurium tetra-chloride mixed in proper composition x and studies their ...
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Thin films of CuInTe2(1-x)S2x were grown by spray pyrolysis and develop thin films on glass substrate at 350C by varying proportion x in the range of 0.25. Aqueous solutions of cupric chloride, indium tri-chloride, thio-urea and tellurium tetra-chloride mixed in proper composition x and studies their electrical properties of all these films. The resistivity of the films was measured for temperature ranging from 77 K to 473 K. The activation energies values were calculated from Arrhenius plot. At very low temperature a variable range hopping conduction mechanism appears to be operative. Surface of thin films has been studied by Scanning Electron Microscope. Copyright © 2018 VBRI Press.
P. Prabeesh; P. Saritha; I Packia Selvam; S. N. Potty
Abstract
Kesterite thin films have been fabricated by chemical spray pyrolysis technique using less toxic organic solvent followed by annealing at different temperatures in inert nitrogen atmosphere. Phase formation and structural evolution were studied by XRD and Raman spectroscopy. The films annealed at 450°C ...
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Kesterite thin films have been fabricated by chemical spray pyrolysis technique using less toxic organic solvent followed by annealing at different temperatures in inert nitrogen atmosphere. Phase formation and structural evolution were studied by XRD and Raman spectroscopy. The films annealed at 450°C and 500°C exhibited excellent properties required for photovoltaic absorber materials. UV-Vis spectroscopy was used to estimate absorption coefficient and band gap; the films annealed at 450°C and 500°C showed band gap of 1.65eV and 1.51eV, respectively. Surface morphological properties and film thickness were studied by FESEM and electrical properties by Hall measurement system. Films annealed at 500°C showed densely packed grains with thickness ~ 1.2μm. Electrical properties of the films annealed in nitrogen atmosphere were in good agreement with the values previously reported for CZTS thin films. Copyright © 2017 VBRI Press
