Document Type : Research Article
Authors
1 Department of Physics, S. K. Porwal College Kamptee, Nagpur, 441002, India
2 Department of Physics, R. T. M Nagpur University Nagpur, 441001, India
Abstract
Thin films of CuInTe2(1-x)S2x were grown by spray pyrolysis and develop thin films on glass substrate at 350C by varying proportion x in the range of 0.25. Aqueous solutions of cupric chloride, indium tri-chloride, thio-urea and tellurium tetra-chloride mixed in proper composition x and studies their electrical properties of all these films. The resistivity of the films was measured for temperature ranging from 77 K to 473 K. The activation energies values were calculated from Arrhenius plot. At very low temperature a variable range hopping conduction mechanism appears to be operative. Surface of thin films has been studied by Scanning Electron Microscope. Copyright © 2018 VBRI Press.
Keywords
VI compounds;Interscience (Wiley): USA, 1967.
DOI: 10.1126/science.159.3811.185
2.Tembhurkar, Y.; Hirde, J.; Thin Solid Films,1992, 215, 65.
DOI: 10.1016/0040-6090(92)90702-d
3.Scanlon, D.; Watson, G.;App. Phys. Lett.,2010, 97, 131904.Ratio of
x
Composition
offilms
Carrier
Type
Hall
Mobility
(μH) cm2/Vs
Carrier
Concentration
(p) cm-3
x = 0CuInTe2p1.570.66× 1019
x = 0.25CuInTe1.5S0.5p1.780.95× 1019
x = 0.5CuInTe1.0S1.0p2.121.21× 1019
x = 0.75CuInTe0.5S1.5p2.681.74× 1019
x = 1.0CuInS2p6.152.33× 1019
Copyright © 2018VBRI Press 128
DOI: 10.1063/1.3491179
4.Nakada, T.; Mizutani, M.; Jpn. J. Appl. Phys., 2002, 41, 165.
DOI: 10.1002/pip.527
5.Mitchell, K.; Eberspacher, C.;Ermer, J.; Rier, D.; Proc 20thIEEE PV.
Spec. Conf.,Las Vegas, New York, Vol 37, 1988.
6.Amara, A.; Rezaiki, W.; Ferdi, A.; Hendaoui, A.; Drici, A.;
Gueriouna, M.; Berne`de, J. C.; Morsli, M.; Solar Energy Materials
& Solar Cells, 2007,91, 1916.
DOI:10.1016/j.solmat.2007.07.007
7.Gossla, M.; Hahn, T.; Metzner, H.; Corrad, J.; Geyer, U.; Thin Solid
Films, 1995, 268, 39.
DOI:http://dx.doi.org/10.1016/0040-6090(95)06870-8.
8.Ellmer, K.; Hinze, J.; Klaer, J.; Thin Solid Films, 2002, 413, 92.
DOI: 10.1016/S0040-6090(02)00355-3
9.Bini, S.; Bindu, K.; Lakshmi, M.; Kartha, C.; Vijayakumar, K.;
Kashiwaba, Y.; Abe, T.; Renewable Energy, 2000, 20, 405.
DOI:10.1016/S0960-1481(99)00122-6
10.Xu, X.; Wang, F.; Liu, J.; Park, K.; Fujishige, M.; Solar Energy
Materials & Solar Cells, 2011, 95, 791.
DOI: 10.1016/j.solmat.2010.10.025
11.Ebrahim, S.; Morsi, I.; Soliman, M.; Elsharkawi, M.; Elzaem, A.;
Alexandria Engineering Journal,2011, 50, 32.
DOI:10.1016/j.aej.2011.01.006.
12.Tembhurkar, Y.; Hirde, J.; Bull. Mater. Sci., 1992, 15, 143.
DOI:10.1007/BF02927439
13.Tembhurkar, Y.; Hirde, J.; Bull. Mater. Sci., 1997, 20, 1011.
DOI:10.1007/BF02744889
14.Tembhurkar, Y.; Hirde, J.; Bull. Mater. Sci., 1994, 17, 465.
DOI:10.1007/BF02757890
15.Ubale, A.; Ibrahim, S.; International Journal of Materials and
Chemistry, 2012, 2, 57.
DOI:10.5923/j.ijmc.20120202.03
16.Tembhurkar, Y.; Hirde, J.; Acta Ciencia Indica, 1992, XVIII P, 239.
17.Tembhurkar, Y.; Hirde, J.; Ind. J. Pure Appl. Phys.,1990, 28, 583.
18.Sakata, H.; Nakao, N.; Phys. Stat. sol (a),1997, 161, 379.
DOI:10.1002/1521-396X(199706)161:2
19.Hussain, K.;Podder, J.; Saha, D.; Ischimura, M.; Ind. J. Pure Appl.
Phys.,2012, 50, 117.
20.Cutler, M.; Mott, N. F.; Phys. Rev.; 1969, 181, 1336.
DOI:10.1103/PhysRev.181.1336
21.Dawar, A.; Kumar, A.; Mall, R.; Mathur, P.; Thin Solid Films, 1984,
112, 107.
DOI:10.1016/0040-6090(84)90488-7
22.Sridevi, D.; Reddy, K.; Ind. J. Pure Appl. Phys.; 1986, 24, 392.
23.Soliman, L.; Ind. J. Pure Appl. Phys., 1994, 32, 166.
)