Indu B. Vashistha; Mahesh C. Sharma; S.K. Sharma
Abstract
In this present study Cu2ZnSnS4 (CZTS) thin films were grown by Chemical Bath Deposition (CBD) method at optimized parameters. These as grown CZTS films were annealed at 3000C for different time 1 hr, 2 hr, 3 hr. These films were characterized by scanning electron microscope (SEM), UV-VIS Spectrophotometer, ...
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In this present study Cu2ZnSnS4 (CZTS) thin films were grown by Chemical Bath Deposition (CBD) method at optimized parameters. These as grown CZTS films were annealed at 3000C for different time 1 hr, 2 hr, 3 hr. These films were characterized by scanning electron microscope (SEM), UV-VIS Spectrophotometer, I-V measurement for study of surface morphology, optical and electrical properties respectively. The SEM analysis revealed that surface modification takes place as the annealing time increases. The optical study shows high absorption in visible region and as annealing time increase red shift in energy band gap occurred. The current-voltage characteristics of the specimen indicated that conductivity of film increases with increased annealing time. Thus, annealing time has prominent impact on surface modification which changes optoelectronic properties of CZTS thin film and results shows that film annealed at 3000C for 3 hr gives high absorption and better conductivity for CZTS thin films. Copyright © 2018 VBRI Press.
Rozalin Panda; Ramakanta Naik; Udai. P. Singh; Naresh. C. Mishra
Abstract
In the present work, Ag/In/Ag/In multilayers were deposited on glass substrates by DC magnetron sputtering and the films were selenized at 350℃. The selenized films were annealed at 450℃ and 500℃. The selenized and annealed films were characterized by X-ray diffraction (XRD), UV-Visible-NIR spectroscopy ...
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In the present work, Ag/In/Ag/In multilayers were deposited on glass substrates by DC magnetron sputtering and the films were selenized at 350℃. The selenized films were annealed at 450℃ and 500℃. The selenized and annealed films were characterized by X-ray diffraction (XRD), UV-Visible-NIR spectroscopy and Field Emission Scanning Electron Microscopy (FESEM). XRD revealed formation of the desired AgInSe2 phase along with Ag2Se as impurity phase. Unlike in previous studies, where conventional approach of optimizing the volume fraction of initial precursor material is adopted to control the phase purity of AgInSe2, we show that annealing highly impure films at 500℃ can suppress the impurity phase and lead to pure AgInSe2 phase. The suppression of the low band gap Ag2Se impurity phase on annealing the films at 500℃ led to increase in the optical band gap. Copyright © 2016 VBRI Press
