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Effect of thermal annealing on the structural, optical and microstructural properties of AgInSe2 thin films

    Rozalin Panda Ramakanta Naik Udai. P. Singh Naresh. C. Mishra

Advanced Materials Proceedings, 2016, Volume 1, Issue 1, Pages 109-113
10.5185/amp.2016/1xx

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Abstract

In the present work, Ag/In/Ag/In multilayers were deposited on glass substrates by DC magnetron sputtering and the films were selenized at 350℃. The selenized films were annealed at 450℃ and 500℃. The selenized and annealed films were characterized by X-ray diffraction (XRD), UV-Visible-NIR spectroscopy and Field Emission Scanning Electron Microscopy (FESEM). XRD revealed formation of the desired AgInSe2 phase along with Ag2Se as impurity phase. Unlike in previous studies, where conventional approach of optimizing the volume fraction of initial precursor material is adopted to control the phase purity of AgInSe2, we show that annealing highly impure films at 500℃ can suppress the impurity phase and lead to pure AgInSe2 phase. The suppression of the low band gap Ag2Se impurity phase on annealing the films at 500℃ led to increase in the optical band gap. Copyright © 2016 VBRI Press
Keywords:
    Chalcopyrite thin film synthesis annealing impurity phase suppression Band gap
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(2021). Effect of thermal annealing on the structural, optical and microstructural properties of AgInSe2 thin films. Advanced Materials Proceedings, 1(1), 109-113. doi: 10.5185/amp.2016/1xx
Rozalin Panda; Ramakanta Naik; Udai. P. Singh; Naresh. C. Mishra. "Effect of thermal annealing on the structural, optical and microstructural properties of AgInSe2 thin films". Advanced Materials Proceedings, 1, 1, 2021, 109-113. doi: 10.5185/amp.2016/1xx
(2021). 'Effect of thermal annealing on the structural, optical and microstructural properties of AgInSe2 thin films', Advanced Materials Proceedings, 1(1), pp. 109-113. doi: 10.5185/amp.2016/1xx
Effect of thermal annealing on the structural, optical and microstructural properties of AgInSe2 thin films. Advanced Materials Proceedings, 2021; 1(1): 109-113. doi: 10.5185/amp.2016/1xx
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