Document Type : Research Article
Authors
Department of Physics and Astrophysics, University of Delhi, New Delhi, 110007,india
Abstract
Ultraviolet (UV) light detection characteristics with sputtered ZnO films deposited on paper with graphite pencil drawn conducting inter-digital electrodes on normal paper have been investigated. Structural, electrical and microstructural properties of ZnO films grown by magnetron sputtering technique at under differentsputtering pressures have been evaluated forultraviolet (UV) light detection. Different types of paper used as substrate material, and the influence of their surface microstructure on the growth of ZnO film quality is examined.Films deposited on the fibrous paper are found to be polycrystalline, whereas the same films on dense glass substrates promote a c-axis oriented growth. The nucleation of sputtered ZnO films on paper is found to occur along the fine fibers of the paper and vary with sputtering pressure. Films grown at higher sputtering pressures (30 to 40 mTorr) in Ar/O2=50:50 are found to yield dense deposits. Pencil drawn inter- digital electrode structures on paper overlaid with 0.25 μm thick ZnO films exhibit reproducible photo response to ultraviolet (UV) light (= 365 nm), with low dark current. It’simportant for low prize and easy fabrication of optoelectronic foldable devices.Copyright © 2017VBRI Press
Keywords
DOI:10.1039/C3LC50406A
2.Ren, T.L.; Tian, H.; Xie, D.; Yang, Y.; Sensors.,2012, 12, 6685.
DOI:10.3390/s120506685
3.Lin,C.W.; Zhao, Z.; Jaemyung,K; Huang,J.; Scientific Reports.,
2014, 22,3812.
DOI:10.1038/srep03812
4.Huang,J.; Zhu,H.; Chen,Y.; Preston,C.; Rohrbach,K.; Cumings,
J.; Hu,L.; J. Am. Chem. Soc.,2013, 7, 2106.
DOI:10.1021/nn304407r
5.Emilia.; Nery,W.; Kubota,L.T.; Anal Bioanal Chem.,2013, 23,
7573.
DOI:10.1007/s002 16-013-6911-4
6.Liana,D. D.; Raguse ,B.;Gooding ,J.J.; Chow, E.; Sensors.,
2012,12, 11505.
DOI:10.3390/s120911505
2011,18,2577.
DOI:10.1002/smll.201100819
8.Shafiee,H.; Asghar,W.; Inci,F.;Yuksekkaya,M.; Jahangir,M.;
Zhang,M.H.; Durmus,N.G.; Gurkan,U.A.; Kuritzkes,D.R.;
Demirici,U.; Scientific Reports, 2015,6,8719.
DOI:10.1038/srep08719
9.Hasan,K.U.;Nur,O.; Willander,M.; Appl. Phys. Lett.,2012,100,
211104.
DOI: 003-6951/2012/Joo(21)/211104/3/
10.Gimenez,A.J.; Limn,J.M Ya n ez.;Seminario,J.M.;J. Phys.
Chem. C.,2011, 115,282.
DOI: 10.1021/jp107812w
11.Gimenez,A.J.; Limn,J.M .Y.; Seminario,J.M.; J.Intell. Mat. Sys.
Struc.,2012O(0)1.
DOI:10.1177/1045389X124557836
12.Gimenez,A.J.; Luna-Bárcenas,G.; Sanchez,I.S.; Yáñez,J.M.;
Sensors.,2014,10604.
DOI: 10.1109/JSEN.2014.2361780
13.Manekkathodi,A.; Lu,M.Y.; Wang,C.W.; Che,L.J.;J. Adv.
Material., 2010,22, 4059.
DOI: 10.1002/adma.201001289
14.Li,H.; Jiao,S.; Li,H.; Li,L.; Zhang, X.; J. Mater. Chem.,2015, 3,
3702.
DOI: 10.1039/c4tc02787f
15.Sharma P.; Mansingh A.; Sreenivas, K.; Appl. Phys. Lett., 2002,80
553.
DOI: 10.1063/1.1445480
16.Sharma, P.; Sreenivas K.; Rao, K.V.; J. Appl. Phys., 2003, 93,
3963.
DOI: 10.1063/1.1558994