In this communication, we report the results of the studies on structural and transport properties of monovalent Na+ doped La1–xNaxMnO3 (LNMO; x = 0.00, 0.05, 0.10, 0.15, 0.20, 0.25 and 0.30) manganites synthesized by conventional ceramic method. X-ray diffraction (XRD) and Rietveld refinements reveal the single phasic nature of LNMO manganites without any detectable impurity within the measurement range. Temperature dependent resistivity, under different applied magnetic fields, has been performed on LNMO samples. Samples understudy exhibit metal to insulator (semiconductor) transition at temperature TP which is strongly influenced by the substitution of Na+ at La3+ site. r – T plots also exhibit resistivity upturn behavior at low temperature well below 40K under all the applied fields. Variation in TP and resistivity has been discussed in the context of the competition between the transport favoring tolerance factor and zener double exchange (ZDE) mechanism and transport degrading Jahn–Teller (JT) and size variance effects. In order to understand the mechanisms responsible for the charge transport in metallic and semiconducting regions and to explore the possible electronic processes responsible for the observed low temperature resistivity minima in all the presently studied LNMO manganites, various models have been employed. It has been found that VRH mechanism gets successfully fitted to the resistivity data in the semiconducting region while ZDE polynomial law is responsible for the charge conduction in metallic region for all the presently studied LNMO samples. A strong dependence of activation energy on the Na+ – content as well as applied magnetic field has been discussed in the context of variation and interrelations between the structural parameters. Charge conduction in metallic region has been discussed in the light of electron–phonon interactions which is influenced by the Na+ – content and applied magnetic field. Electrostatic blockade model has been employed to understand the low temperature resistivity minima behavior. Blocking energy for the charge carriers shows a dependence on the magnetic energy provided to the charge carriers. Present study can be useful to understand and to control the charge conduction in the manganites and hence to design the manganite based thin film devices for various spintronic applications.