Document Type : Research Article


School of Engineering Sciences and Technology, University of Hyderabad, 500046, India


SiO2 nanoparticles of average size 15-20 nm have been synthesized and its dielectric properties have been investigated as a function of frequency (between 20 Hz to 2 MHz). A very high dielectric constant of ca. 14000 at 20 Hz and at room temperature has been observed which is very high compared to the conventional bulk SiO2 particles (ca. 50-100). For this new SiO2 the loss value is found to be less than 1. These SiO2 nanoparticles with high dielectric constant and low loss can be offered its use in constructing high efficient electronic circuit boards and storage devices. Spectra between real and imaginary parts of dielectric constant reveal an inclined line with depressed semicircle. Impedance measurements have been performed to know the electrical properties of the novel SiO2 nanoparticles. XRD, TEM and FTIR characterizations confirm the solid state network structural, morphological shape and size, and chemical functionality of SiO2 respectively. Copyright © 2016 VBRI Press