TY - JOUR ID - 16103 TI - Ba-ZnS passivation layer for improved performance of quantum dot sensitized solar cells JO - Advanced Materials Proceedings JA - AMP LA - en SN - 2002-4428 AU - R. Kulkarni, Deepti AU - H. Ayachit, Narasimha AU - M. Kulkarni, Raviraj AD - Department of Physics, Rani Channamma University, Belagavi-591156, Karntaka, INDIA AD - Department of Chemistry, KLS Gogte Institute of Technology (Autonomous), Affiliated to Visvesvaraya Technological University, Udyambag, Belagavi-590008, Karnataka, India Y1 - 2018 PY - 2018 VL - 3 IS - 3 SP - 181 EP - 183 KW - TiO2 KW - ZnS KW - passivation layer KW - solar cells KW - quantum dot DO - 10.5185/amp.2018/017 N2 - We report an inexpensive TiO2 based quantum dot solar cell (QDSSC) with improved power conversion efficiency prepared by simple techniques. Barium doped zinc sulfide has been successfully deposited on cadmium sulfide quantum dots (QDs) by simple successive ion layer adsorption and reaction (SILAR) technique. The Barium doped zinc sulfide is utilized as a passivation layer in the QDSSC, which helped in better charge separation. The copper sulfide (Cu2S) and reduced graphene oxide deposited on FTO was used as a counter electrode. The developed QDSSC showed superior performance when tested with AM 1.5 solar simulator using sulfide/Polysulfide electrolyte. The photoconversion efficiency of FTO/TiO2/CdS/BaZnS/Cu2S-Graphene oxide  is better than that  of FTO/TiO2 /CdS/ZnS/Cu2S-Reduced Graphene oxide. Copyright © 2018 VBRI Press.   UR - https://amp.iaamonline.org/article_16103.html L1 - https://amp.iaamonline.org/article_16103_1169827eb9579d3a50760be7a0341b22.pdf ER -