Investigation of deep electronic levels in n‐type and p‐type 3C‐SiC using photoluminescence

Martin Wilhelm; Mikael Syväjärvi; Peter J. Wellmann

Volume 2, Issue 12 , 2017, , Pages 769-773

https://doi.org/10.5185/amp.2017/415/

Abstract
  Among the various SiC polytypes, cubic 3C‐SiC is much more difficult to grow in high crystalline quality than the commercially introduced hexagonal 6H‐SiC and 4H‐SiC counterparts. Besides some benefits of 3C‐SiC for transistor applications related to a greater electron mobility and a lower metal‐oxide‐semiconductor ...  Read More