Martin Wilhelm; Mikael Syväjärvi; Peter J. Wellmann
Abstract
Among the various SiC polytypes, cubic 3C‐SiC is much more difficult to grow in high crystalline quality than the commercially introduced hexagonal 6H‐SiC and 4H‐SiC counterparts. Besides some benefits of 3C‐SiC for transistor applications related to a greater electron mobility and a lower metal‐oxide‐semiconductor ...
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Among the various SiC polytypes, cubic 3C‐SiC is much more difficult to grow in high crystalline quality than the commercially introduced hexagonal 6H‐SiC and 4H‐SiC counterparts. Besides some benefits of 3C‐SiC for transistor applications related to a greater electron mobility and a lower metal‐oxide‐semiconductor interface trap density compared to 4H‐SiC, new potential optoelectronic applications have been introduced very recently. Boron doped 3C‐SiC may act as an ideal candidate for an intermediate band (IB) solar cell material. Aluminum doped p‐type 3C‐SiC could lead to the development of efficient optoelectrochemical water splitting cells. Finally, 3C‐SiC with its various intrinsic point defects has been considered as a suitable candidate for future spintronic‐applications. All these applications will critically depend on further understanding defect behaviour on atomic level. In our study we investigated free standing n‐type and p‐type 3C‐SiC material grown in our lab. Temperature dependent photoluminescence measurements revealed the presence of carbon vacancy related VC and VC-CSi defect transitions in the p‐type materials but not in the n‐type materials. This observation present in as grown 3C-SiC is believed to have significant impact on the optoelectronic applications. Copyright © 2017 VBRI Press.
Michael Schoeler; Philipp Schuh; Grazia Litrico; Francesco La Via; Marco Mauceri .; Peter J. Wellmann
Abstract
In this article, sublimation growth of 3C-SiC on 3C-SiC-on-Si seeding layers was evaluated by characterizing the densities of protrusions and stacking faults (SF). Both defects are among the most critical concerning the growth process and the realization of high quality material for device applications. ...
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In this article, sublimation growth of 3C-SiC on 3C-SiC-on-Si seeding layers was evaluated by characterizing the densities of protrusions and stacking faults (SF). Both defects are among the most critical concerning the growth process and the realization of high quality material for device applications. By variation of growth parameters like temperature, growth rate and 3C-SiC-thickness we conducted a series of experiments and characterized these layers by optical microscopy and KOH etching. The protrusion density is predetermined by the seeding layers and was kept at a constant level, whereas a decrease of SF-density was observed with increasing layer thickness during subsequent sublimation growth steps. Therefore, in the case of Sublimation Epitaxy (SE) it has been found appropriate to distinguish between defects that can be reduced during SE and defects that are merely reproduced from the seeding material during sublimation growth. Furthermore, a weak trend towards a decrease of SF-density with increasing growth temperature was observed. The findings in this work demonstrates the potential of SE in growing thick and high-quality 3C-SiC layers if sufficiently good seeding layers were available. Copyright © 2017 VBRI Press.
