Influence of back barrier layer thickness on device performance of AlGaN/GaN MOS-HEMT

Aboo Bakar Khan; Mohini Sharma; Syed Gulraze Anjum; Mohd Jawaid Siddiqui

Volume 3, Issue 7 , 2018, , Pages 480-484

https://doi.org/10.5185/amp.2018/7000

Abstract
  In this work, we have performed the influence of back barrier layer thickness variation on AlGaN/GaN Metal Oxide Semiconductor High Electron Mobility Transistor (MOS-HEMT) device with 0.5 µm Schottky gate length.  The AlGaN back barrier layer presented increases the conduction band with respect ...  Read More