Optimization of the SiC powder source size distribution for the sublimation growth of long crystal boules

Matthias Arzig; TaChing Hsiao; Peter J. Wellmann

Volume 3, Issue 9 , 2018, , Pages 540-543

https://doi.org/10.5185/amp.2018/1414

Abstract
  In this work we studied the influence of three different SiC powder size distributions and the sublimation behavior during physical vapor transport growth of SiC in a 3 inch crystal processing configuration. The evolution of the source material as well as of the crystal growth interface was carried out ...  Read More

Characterization of protrusions and stacking faults in 3C-SiC grown by sublimation epitaxy using 3C-SiC-on-Si seeding layers

Michael Schoeler; Philipp Schuh; Grazia Litrico; Francesco La Via; Marco Mauceri .; Peter J. Wellmann

Volume 2, Issue 12 , 2017, , Pages 774-778

https://doi.org/10.5185/amp.2017/419

Abstract
  In this article, sublimation growth of 3C-SiC on 3C-SiC-on-Si seeding layers was evaluated by characterizing the densities of protrusions and stacking faults (SF). Both defects are among the most critical concerning the growth process and the realization of high quality material for device applications. ...  Read More