Syed Gulraze Anjum; Aboo Bakar Khan; Mohammad Jawaid Siddiqui; Parvez Ahmad Alvi
Abstract
In this article, we have computationally analyzed the Type-I InGaAsN/GaAs (dilute N) material system based step-index separately confined heterostructure (STINSCH) consisting of a compressively strained single quantum well layer. The whole structure is assumed to be grown on GaAs substrate. The optical ...
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In this article, we have computationally analyzed the Type-I InGaAsN/GaAs (dilute N) material system based step-index separately confined heterostructure (STINSCH) consisting of a compressively strained single quantum well layer. The whole structure is assumed to be grown on GaAs substrate. The optical gain spectra have been calculated and compared for single quantum well structure for the two different carrier densities under TE and TM polarization modes at room temperature. The size of the STINSCH based nano-scale heterostructure taken as a whole including SQW together with barriers and claddings is 47nm. In order to validate the computed optical gain, the anti-guiding factor has also been evaluated for the same nano-heterostructure. The GAIN software package has been utilized to obtain the various lasing properties like optical gain, modal gain, and anti-guiding factor. Therefore, this lasing nano-heterostructure may found application in optical fiber communication systems as a light source because of less attenuation and minimum optical loss. Copyright © 2018 VBRI Press.
Aboo Bakar Khan; Mohini Sharma; Syed Gulraze Anjum; Mohd Jawaid Siddiqui
Abstract
In this work, we have performed the influence of back barrier layer thickness variation on AlGaN/GaN Metal Oxide Semiconductor High Electron Mobility Transistor (MOS-HEMT) device with 0.5 µm Schottky gate length. The AlGaN back barrier layer presented increases the conduction band with respect ...
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In this work, we have performed the influence of back barrier layer thickness variation on AlGaN/GaN Metal Oxide Semiconductor High Electron Mobility Transistor (MOS-HEMT) device with 0.5 µm Schottky gate length. The AlGaN back barrier layer presented increases the conduction band with respect to GaN channel layer so that more no of electron confinement into the GaN channel layer and improve the high-frequency performance. The effect of the back-barrier layer thickness is performed by using 2-D TCAD Atlas Silvaco numerical simulation tool by taking Hydrodynamic mobility model. Due to a large amount of two-dimensional electron gas (2-DEG) density at the AlGaN/GaN heterointerface of the MOS-HEMT device higher drain current density is obtained. The 2-D simulation is carried out with a variation of back barrier layer thickness for various device parameter such as transfer characteristics (Id-Vg), drain current with a drain voltage (Id-Vd), transconductance (gm), drain induced barrier lowering (DIBL), conduction band energy and electron concentration into the channel. In this simulation, we have also performed the RF performance like a gate to source capacitance (Cgs) and current gain cut-off frequency of AlGaN/GaN MOS-HEMT device. The results obtained by variation of AlGaN back barrier layer thickness can be a better solution in future analog and RF device application. Copyright © 2018 VBRI Press.