Analysis of optical gain characteristics of Type-I InGaAsN/GaAs (Dilute N) based lasing nano-heterostructure

Syed Gulraze Anjum; Aboo Bakar Khan; Mohammad Jawaid Siddiqui; Parvez Ahmad Alvi

Volume 3, Issue 9 , 2018, , Pages 558-561

https://doi.org/10.5185/amp.2018/7022

Abstract
  In this article, we have computationally analyzed the Type-I InGaAsN/GaAs (dilute N) material system based step-index separately confined heterostructure (STINSCH) consisting of a compressively strained single quantum well layer. The whole structure is assumed to be grown on GaAs substrate. The optical ...  Read More

Influence of back barrier layer thickness on device performance of AlGaN/GaN MOS-HEMT

Aboo Bakar Khan; Mohini Sharma; Syed Gulraze Anjum; Mohd Jawaid Siddiqui

Volume 3, Issue 7 , 2018, , Pages 480-484

https://doi.org/10.5185/amp.2018/7000

Abstract
  In this work, we have performed the influence of back barrier layer thickness variation on AlGaN/GaN Metal Oxide Semiconductor High Electron Mobility Transistor (MOS-HEMT) device with 0.5 µm Schottky gate length.  The AlGaN back barrier layer presented increases the conduction band with respect ...  Read More